Carrier freeze-out effects in semiconductor devices
Identifieur interne : 027352 ( Main/Repository ); précédent : 027351; suivant : 027353Carrier freeze-out effects in semiconductor devices
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Carrier freeze-out effects in semiconductor devices</title><author><name sortKey="Ahmad, N" uniqKey="Ahmad N">N. Ahmad</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Garyounis univ., fac. education</s1><s2>Elbeida</s2><s3>LBY</s3><sZ>A11011000</sZ></inist:fA14><country>Libye</country><wicri:noRegion>Elbeida</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">87-0472688</idno><date when="1987">1987</date><idno type="stanalyst">PASCAL 87-0472688 INIST</idno><idno type="RBID">Pascal:87-0472688</idno><idno type="wicri:Area/Main/Corpus">027514</idno><idno type="wicri:Area/Main/Repository">027352</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied Physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Charge carrier concentration</term><term>Electrical conductivity</term><term>Experimental study</term><term>Gunn effect</term><term>Indium Antimonides</term><term>Inorganic compound</term><term>Pressure</term><term>Semiconductor materials</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Semiconducteur</term><term>Composé minéral</term><term>Effet Gunn</term><term>Etude expérimentale</term><term>Pression</term><term>Conductivité électrique</term><term>Concentration porteur charge</term><term>Indium Antimoniure</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Composé minéral</term></keywords></textClass></profileDesc></teiHeader></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>61</s2></fA05><fA06><s2>5</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Carrier freeze-out effects in semiconductor devices</s1></fA08><fA11 i1="01" i2="1"><s1>AHMAD (N.)</s1></fA11><fA14 i1="01"><s1>Garyounis univ., fac. education</s1><s2>Elbeida</s2><s3>LBY</s3><sZ>A11011000</sZ></fA14><fA20><s1>1905-1909</s1></fA20><fA21><s1>1987</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>CNRS</s1><s2>126</s2></fA43><fA44><s0>0000</s0></fA44><fA45><s0>6 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>87-0472688</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i2="1"><s0>Journal of applied Physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC02 i1="01" i2="2"><s0>001B11B03C</s0></fC02><fC03 i1="01" i2="2" l="FRE"><s0>Semiconducteur</s0></fC03><fC03 i1="02" i2="2" l="FRE"><s0>Composé minéral</s0></fC03><fC03 i1="03" i2="2" l="FRE"><s0>Effet Gunn</s0></fC03><fC03 i1="04" i2="2" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="05" i2="2" l="FRE"><s0>Pression</s0></fC03><fC03 i1="06" i2="2" l="FRE"><s0>Conductivité électrique</s0></fC03><fC03 i1="07" i2="2" l="FRE"><s0>Concentration porteur charge</s0></fC03><fC03 i1="18" i2="2" l="FRE"><s0>Indium Antimoniure</s0></fC03><fC03 i1="01" i2="2" l="ENG"><s0>Semiconductor materials</s0></fC03><fC03 i1="02" i2="2" l="ENG"><s0>Inorganic compound</s0></fC03><fC03 i1="03" i2="2" l="ENG"><s0>Gunn effect</s0></fC03><fC03 i1="04" i2="2" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="05" i2="2" l="ENG"><s0>Pressure</s0></fC03><fC03 i1="06" i2="2" l="ENG"><s0>Electrical conductivity</s0></fC03><fC03 i1="07" i2="2" l="ENG"><s0>Charge carrier concentration</s0></fC03><fC03 i1="18" i2="2" l="ENG"><s0>Indium Antimonides</s0></fC03><fC03 i1="01" i2="2" l="SPA"><s0>Semiconductor(material)</s0></fC03><fC03 i1="02" i2="2" l="SPA"><s0>Compuesto mineral</s0></fC03><fC03 i1="03" i2="2" l="SPA"><s0>Efecto Gunn</s0></fC03><fC03 i1="04" i2="2" l="SPA"><s0>Estudio experimental</s0></fC03><fC03 i1="05" i2="2" l="SPA"><s0>Presion</s0></fC03><fC03 i1="06" i2="2" l="SPA"><s0>Conductividad electrica</s0></fC03><fC03 i1="07" i2="2" l="SPA"><s0>Concentración portador carga</s0></fC03><fC03 i1="18" i2="2" l="SPA"><s0>Indio</s0></fC03><fC04 i1="01" i2="2"><s0>PM03!18</s0></fC04><fN21><s1>717</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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